Finding optimal read thresholds and related voltages for solid state memory
US9305658B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2014 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Nov 18, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A read is performed using a first iteration of a read threshold voltage that is set to a default voltage to obtain a first characteristic. A second iteration of the read threshold voltage is generated using the default voltage and an offset. A read is performed using the second iteration of the read threshold voltage to obtain a second characteristic. A third iteration of the read threshold voltage is generated using the first and second characteristics. A read is performed using the third iteration of the read threshold voltage to obtain a third characteristic. It is determined if the third characteristic is one of the two characteristics closest to a stored characteristic. If so, a fourth iteration of the read threshold voltage is generated using the two closest characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.