Method for growing germanium epitaxial films

US9305779B2 · kind B2 · utility

Assignee

• BAE Systems Information and Electronic Systems Integration Inc. · US

Inventors

• Daniel N. Carothers · Oro Valley, US
• Craig M. Hill · Warrenton, US
• Andrew T. S. Pomerene · Redding, US
• Vu A. Vu · Falls Church, US

Key dates

• Filing date: Aug 11, 2009
• Grant date: Apr 5, 2016
• Expiry date: Dec 24, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02658
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for growing germanium epitaxial films is disclosed. Initially, a silicon substrate is preconditioned with hydrogen gas. The temperature of the preconditioned silicon substrate is then decreased, and germane gas is flowed over the preconditioned silicon substrate to form an intrinsic germanium seed layer. Next, a mixture of germane and phosphine gases can be flowed over the intrinsic germanium seed layer to produce an n-doped germanium seed layer. Otherwise, a mixture of diborane and germane gases can be flowed over the intrinsic germanium seed layer to produce a p-doped germanium seed layer. At this point, a bulk germanium layer can be grown on top of the doped germanium seed layer.