Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)
US9305792B2 · kind B2 · utility
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Key dates
| Filing date | Aug 12, 2011 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Aug 16, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt % of an alkaline compound; (B) 0.1 to 50 wt % of a cyclic compound having a boiling point of 100° C. or more; (C) 0.00001 to 10 wt % of a silica-containing compound; and (D) residual water. The etching composition can maximize the absorbance of light of the surface of a crystalline silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.