Methods of forming semiconductor memory devices
US9305933B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 17, 2014 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Oct 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating a semiconductor device are provided. The method includes alternately stacking first material layers and second material layers on a substrate to form a stacked structure, forming a through hole penetrating the stacked structure, forming a data storage layer on a sidewall of the through hole, forming a semiconductor pattern electrically connected to the substrate on an inner sidewall of the data storage layer, etching an upper portion of the data storage layer to form a first recessed region exposing an outer sidewall of the semiconductor pattern, and forming a first conductive layer in the first recessed region. Related devices are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.