Thin film transistor having an active pattern and a source metal pattern with taper angles
US9305940B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2014 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Aug 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes a gate electrode, an active pattern overlapping with the gate electrode and including a semiconductive oxide, and a source metal pattern disposed on the active pattern and including a source electrode and a drain electrode spaced apart from the source electrode. The active pattern underlaps an entire portion of a lower surface of the source metal pattern and minimally protrudes beyond lateral ends of the source metal pattern due to the active pattern having sidewall taper angles that are substantially greater than corresponding and adjacent sidewall taper angles of the overlying source metal pattern. Thus parasitic capacitance may be reduced and performance enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.