Hetero junction field effect transistor and method for manufacturing the same
US9306049B2 · kind B2 · utility
4Cited by
9References
6Claims
0Family size
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Key dates
| Filing date | Oct 24, 2013 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Oct 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Hetero junction field effect transistors and methods of fabricating such transistors are disclosed wherein: a first compound semiconductor layer is provided on a substrate; a second compound semiconductor layer is provided on the first compound semiconductor layer; a gate insulating layer is provided on the second compound semiconductor layer; and a gate electrode is provided on the gate insulating layer such that the gate insulating layer penetrates the second compound semiconductor layer so as to be in contact with the first compound semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.