Method for manufacturing back contact solar cells

US9306088B1 · kind B1 · utility

Assignee

• E.I. DU PONT DE NEMOURS AND COMPANY · US

Inventors

• Giuseppe Scardera · Sunnyvale, US
• Shannon Dugan · Hutchinson, US

Key dates

• Filing date: Sep 17, 2015
• Grant date: Apr 5, 2016
• Expiry date: Sep 17, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method for manufacturing back contact solar cells, comprising steps of: (a) providing a silicon substrate doped with phosphorus; (b) doping the front surface and the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a front side p+ region on the front surface and a rear side p+ region on the rear surface; (c) forming a silicon dioxide layer on the front surface and the rear surface; (d) depositing a phosphorus-containing doping paste on the silicon dioxide layer of the rear surface in a second pattern; (e) heating the silicon substrate in order to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming a rear side n+ region on the rear surface of the silicon substrate beneath the phosphorus-containing doping paste; and (f) removing the silicon dioxide layer from the silicon substrate.