Semiconductor lasers and etched-facet integrated devices having non-uniform trenches
US9306373B2 · kind B2 · utility
1Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2013 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Jun 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/343
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge-emitting etched-facet optical semiconductor structure includes a substrate, an active multiple quantum well (MQW) region formed on the substrate, a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet disposed in a first window and a waveguide second etched end facet disposed in a second window, and first and second trenches having non-uniform widths extending in substantially the longitudinal direction between the first and second windows.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.