Hybrid power amplifier comprising heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductor (CMOS) devices
US9306514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2014 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Jun 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45596
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.