Surface doping and bandgap tunability in hydrogenated graphene
US9312130B2 · kind B2 · utility
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Key dates
| Filing date | Jul 15, 2013 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Aug 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2236
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.