Manufacturing method of a thin film transistor
US9312146B2 · kind B2 · utility
2Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2013 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Oct 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide a thin film transistor and a manufacturing method thereof and a display device. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, and the source electrode and the drain electrode are connected to the active layer by the ohmic contact layer. The ohmic contact layer is provided at a lateral side of the active layer and contacts the lateral side of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.