Method of dicing thin semiconductor substrates
US9312178B2 · kind B2 · utility
3Cited by
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15Claims
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Assignee
Inventors
Key dates
| Filing date | Jun 25, 2015 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Jun 25, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of dicing a plurality of integrated devices included in a semiconductor substrate using laser energy comprises the steps of directing a first laser beam onto a cutting line along the substrate to ablate a portion of the substrate located along the cutting line to be diced, the portion of the substrate that is ablated forming a recast material adjacent to the cutting line of the substrate that has been diced. A second laser beam is directed onto another portion of the substrate adjacent to the cutting line to conduct heat processing of the recast material formed adjacent to the cutting line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.