Semiconductor device
US9312207B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Sep 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/206
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.