Semiconductor device

US9312280B2 · kind B2 · utility

Assignee

• Semiconductor Energy Laboratory Co., Ltd. · JP

Inventor

• Hidetomo Kobayashi · Yokohama, JP

Key dates

• Filing date: Jul 16, 2015
• Grant date: Apr 12, 2016
• Expiry date: Jul 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/481

Abstract

A semiconductor device capable of retaining data for a long time is provided. The semiconductor device includes first to third transistors, a fourth transistor including first and second gates, first to third nodes, a capacitor, and an input terminal. A source of the first transistor is connected to the input terminal. A drain of the first transistor and a source of the second transistor are connected to the first node. A gate of the second transistor, a drain of the second transistor, and a source of the third transistor are connected to the second node. A gate of the third transistor, a drain of the third transistor, the capacitor, and the second gate of the fourth transistor are connected to the third node.