Patent · US Active

Semiconductor device and a manufacturing method thereof

US9312295B2 · kind B2 · utility

2Cited by
5References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 27, 2015
Grant dateApr 12, 2016
Priority date
Expiry dateFeb 27, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/811
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.