Light-emitting device and method for manufacturing the same
US9312303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Apr 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
Abstract
A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.