Ultra high voltage semiconductor device with electrostatic discharge capabilities
US9312348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Mar 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
A semiconductor device comprises a semiconductor substrate, a first layer over the semiconductor substrate, and a drain region in the first layer. The drain region comprises a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion have a same doping type and a different doping concentration than the drain rectangular portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.