Semiconductor device and manufacturing method thereof
US9312350B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Apr 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate, a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer, a gate trench formed in the second semiconductor layer or in the second and first semiconductor layers, a gate electrode formed at the gate trench, and a source electrode and a drain electrode formed on the second semiconductor layer. The gate trench has terminal parts of a bottom of the gate trench formed shallower than a center part of the bottom. A part of a sidewall of the gate trench is formed of a surface including an a-plane. The center part of the bottom is a c-plane. The terminal parts of the bottom form a slope from the c-plane to the a-plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.