Double gate type thin film transistor and organic light emitting diode display including the same
US9312353B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Dec 5, 2013 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Dec 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.