Patent · US Active

Transistor structure, method for manufacturing a transistor structure, force-measuring system

US9312397B2 · kind B2 · utility

0Cited by

5References

4Claims

0Family size

Assignee

Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

Ignaz Eisele · Icking, DE
Martin HEIGL · Weiden, DE
Karl Haberger · Planegg, DE

Key dates

Filing date	Dec 20, 2012
Grant date	Apr 12, 2016
Priority date	—
Expiry date	Feb 10, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/68
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A transistor structure includes a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate. Additionally, the transistor structure includes a control electrode associated with the channel region, the control electrode having a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region. The distance between the control electrode portion and the channel region is changed based on the action of force.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.