Light-emitting diode fabrication method
US9312434B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2015 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Jun 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
Abstract
A LED fabrication method includes: providing a substrate; forming a low-temperature AlxGa1-xN (0≦x≦1) layer over the growth substrate; setting the growth pressure from high to low and temperature and rotation rate from low to high to realize change from three-dimensional growth to two-dimensional growth of the GaN structure layer before growth of the multiple quantum-well layer, in which, Si is doped at position approximate to the multiple quantum-well layer to form an undoped gradient GaN layer and an N-type gradient GaN layer; growing a multiple quantum-well layer, an AlxGa1-xN (0≦x≦1) layer and a P-type layer; and during later chip fabrication, dividing the epitaxial wafer over the etched N-type platform into chip grains and immersing them in chemical solutions for wet etching; and forming an inverted pyramid structure with rough side wall over the multiple quantum-well layer to improve light-emitting efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.