Semiconductor light emitting device
US9312439B2 · kind B2 · utility
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38References
14Claims
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Key dates
| Filing date | Aug 7, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
Abstract
There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.