Metallic contact for optoelectronic semiconductor device

US9312448B2 · kind B2 · utility

Assignee

• Sensor Electronic Technology, Inc.

Inventors

• Alexander Lunev · Columbia, US
• Maxim S. Shatalov · Columbia, US
• Alexander Dobrinsky · Loudonville, US
• Michael Shur · Latham, US
• Remigijus Gaska · Columbia, US

Key dates

• Filing date: Jul 12, 2013
• Grant date: Apr 12, 2016
• Expiry date: Jul 12, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.