Method of implementing a ferroelectric tunnel junction, device comprising a ferroelectric tunnel junction and use of such a device
US9312471B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 2, 2012 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Apr 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of implementing a ferroelectric tunnel junction, said junction comprising to films each forming an electrode-type conductive element, and separated by a film forming a ferroelectric element acting as the tunnel barrier, said ferroelectric element being able to possess a remanent polarization. According to the invention, the ferroelectric element possesses a domain structure, said domains corresponding to regions of the ferroelectric element the polarization of which is oriented one way in a single direction; and when a voltage is applied between the electrodes, the absolute value of the voltage being equal to or higher than the absolute value of what is called a saturation voltage, the ferroelectric element main comprises only a single domain; and when a voltage is applied between the electrodes, the absolute value of the voltage being lower than the absolute value of what is called the saturation voltage, the ferroelectric element comprises a plurality of separate domains, the spatial distribution of said domains and their proportions being controlled by the chosen voltage value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.