Nitride semiconductor laser element
US9312661B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 21, 2015 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Apr 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor laser element includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer. The active layer includes well layers, and at least one barrier layer provided between the well layers. The barrier layer includes a barrier layer having band gap energy higher than that of an n-side optical guide layer. The p-type semiconductor layer includes an electron barrier layer having band gap energy higher than that of all barrier layers comprised in the active layer. A p-side optical guide layer includes a first region disposed on a side of a final well layer and having band gap energy lower than that of the n-side optical guide layer, and a second region disposed on a side of the electron barrier layer and having band gap energy higher than that of the n-side optical guide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.