Semiconductor device
US9312845B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 10, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Sep 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0063
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In aspects of the invention, a semiconductor device can include one level shift circuit that outputs a low-side input signal as a high-side signal upon raising a signal level, a pulse modulation circuit that operates in a low-side region, generates a data symbol constituted by or more bits and representing a set signal or a reset signal, where bit is defined as a combination of codes forming a pair. The pulse generation circuit can output the generated data symbol as an input signal of the level shift circuit. Also included can be a pulse demodulation circuit that operates in a high-side region, demodulates the data symbol outputted from the level shift circuit and generates a level-shifted set signal or reset signal; and a control circuit that controls conduction/non-conduction of the high-potential-side switching element on the basis of the level-shifted set signal or reset signal outputted from the pulse demodulation circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.