Methods of forming MEMS device

US9315379B2 · kind B2 · utility

Assignee

• Shanghai Huahong Grace Semiconductor Manufacturing Corporation · CN

Inventors

• Zhenxing Zhang · Qingdao, CN
• Pei Xi · Shanghai, CN
• Lei Xiong · Shanghai, CN
• Jianpeng Wang · Xi'an, CN
• Ting Shi · Shanghai, CN

Key dates

• Filing date: Dec 18, 2014
• Grant date: Apr 19, 2016
• Expiry date: Dec 18, 2034

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C1/00849
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of forming a micro-electro-mechanical systems (MEMS) device includes: providing a substrate; forming a tantalum nitride (TaN) layer on the substrate; forming a dielectric anti-reflective coating (DARC) layer on the TaN layer; coating photoresist on the DARC layer and etching the DARC: and TaN layers to form a trench; performing intensified ashing and wet cleaning processes to remove the photoresist and the DARC layer. The DARC layer can prevent the formation of tantalum-containing polymeric substances from a reaction between the TaN layer and the photoresist during the intensified ashing process.