Exchange enhanced cap manufactured with argon and oxygen implantation
US9318140B2 · kind B2 · utility
1Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2012 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/84
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic media having a novel cap layer that allows the cap layer having improved exchange coupling and reduced thickness. The cap layer is doped with a non-reactive element such as Ar, Kr, Xe, Ne or He preferably Ar. This doping reduces increases exchange coupling and reduces the dead layer, allowing the cap layer to be made thinner for reduced magnetic spacing and improved data recording performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.