Polishing slurry and polishing method
US9318339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2012 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Oct 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides a polishing slurry capable of polishing even high-hardness materials such as silicon carbide and gallium nitride at a high polishing speed. The present invention is a polishing slurry including a slurry containing a manganese oxide particle and a manganate ion for polishing high-hardness materials having a Mohs hardness of 8 or higher. In the present invention, the manganese oxide particle in the slurry is preferably 1.0 mass % or more; the manganese oxide is preferably manganese dioxide; and the manganate ion is preferably permanganate ion. The polishing slurry according to the present invention enables even high-hardness hardly-machinable materials such as silicon carbide and gallium nitride to be polished smoothly at a high speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.