Semiconductor device and manufacturing method thereof for protecting metal-gate from oxidation
US9318445B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Jun 6, 2013 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Jun 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a manufacturing method thereof is provided. The method comprises: providing a substrate for the semiconductor device with a gate structure and a first dielectric interlayer being formed thereon, said gate structure comprising a metal gate and an upper surface of said first dielectric interlayer being substantially flush with an upper surface of said gate; forming an interface layer to cover at least the upper surface of said gate such that the upper surface of said gate is protected from being oxidized; and forming a second dielectric interlayer on said interface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.