Semiconductor device and method for fabricating the same
US9318471B2 · kind B2 · utility
12Cited by
1References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 22, 2015 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Oct 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a first substrate including a first surface layer that includes first and second electrodes; a second substrate including a second surface layer that includes third and fourth electrodes, and directly bonded to the first substrate such that the second surface layer is in contact with the first surface layer; and a functional film provided between the second and fourth electrodes. The first and third electrodes are bonded together so as to be in contact with each other, and the second electrode, the functional film, and the fourth electrode constitute a passive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.