Semiconductor device
US9318570B2 · kind B2 · utility
1Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2014 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Aug 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/027
Abstract
Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.