Field effect transistor having germanium nanorod and method of manufacturing the same
US9318573B2 · kind B2 · utility
10Cited by
11References
13Claims
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Key dates
| Filing date | Aug 22, 2013 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Dec 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K30/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate insulation layer formed on a silicon substrate, at least one nanorod embedded in the gate insulation layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate insulation layer between the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.