Thin film transistor, method of manufacturing the same, and electronic apparatus
US9318611B2 · kind B2 · utility
4Cited by
3References
11Claims
0Family size
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Key dates
| Filing date | Jul 1, 2014 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Jul 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/60
Abstract
A thin film transistor includes: a gate electrode and a pair of source and drain electrodes; and a semiconductor layer having a channel formed therein, and having a pair of connection sections connected to the pair of source and drain electrodes, respectively, wherein one or both of opposed surfaces of the pair of connection sections is a non-flat surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.