Organic light emitting diode display having thin film transistor substrate using oxide semiconductor
US9318616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2014 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Jul 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a thin film transistor having an oxide semiconductor material for an organic light emitting diode display and a method for manufacturing the same. The organic light emitting diode display includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; a semiconductor layer formed on the gate insulating layer to overlap with the gate electrode, and including a channel area and source and drain areas which extend from the channel area to both outsides, respectively and are conductorized; an etch stopper formed on the channel area and exposing the source area and the drain area; a source electrode contacting portions of the exposed source electrode; and a drain electrode contacting portions of the exposed drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.