Photodiode and method for making the same
US9318631B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Jan 13, 2015 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Jan 13, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A method for manufacturing a photodiode including the steps of providing a substrate, solution depositing a quantum nanomaterial layer onto the substrate, the quantum nanomaterial layer including a number of quantum nanomaterials having a ligand coating, and applying a thin-film oxide layer over the quantum nanomaterial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.