Nitride semiconductor light-emitting element
US9318645B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2013 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Oct 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A nitride semiconductor light-emitting element includes a second light-emitting layer, a third barrier layer, and a first light-emitting layer from a side close to a p-type nitride semiconductor layer. The first light-emitting layer includes a plurality of first quantum well layers and a first barrier layer provided between the plurality of first quantum well layers. The second light-emitting layer includes a plurality of second quantum well layers and a second barrier layer provided between the plurality of second quantum well layers. The second quantum well layers include a multiple quantum well light-emitting layer thicker than the first quantum well layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.