Semiconductor laser device and manufacturing method thereof, and submount manufacturing method
US9318871B2 · kind B2 · utility
4Cited by
5References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 25, 2014 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Apr 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.