Acoustically-engineered multi-port piezoelectric-on-semiconductor resonators for accurate temperature sensing and reference signal generation
US9318998B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2013 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Nov 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03L1/028
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a multi-port piezoelectric-on-semiconductor microelectromechanical resonator, which is configured to support independent and concurrent piezoelectric transduction of multiple resonance modes. The resonator includes a semiconductor resonator body (e.g., Si body) suspended opposite an underlying recess in a substrate. Opposite ends of the semiconductor resonator body are anchored to the substrate. The resonator body may be formed so that a plan layout view of a portion of the semiconductor resonator body is dumbbell-shaped to thereby support acoustic energy trapping of multiple high-Q resonance modes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.