High-k metal gate device structure for human blood gas sensing
US9322799B2 · kind B2 · utility
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3References
21Claims
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Key dates
| Filing date | Apr 3, 2013 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Nov 16, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4141
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.