Patent · US Active

Memory device and method of performing a write operation in a memory device

US9324392B1 · kind B1 · utility

26Cited by
3References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 23, 2014
Grant dateApr 26, 2016
Priority date
Expiry dateOct 23, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C8/18
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The present invention provides a technique for performing write operations within a memory device comprising an array of memory cells. Wordline driver circuitry is used to assert a wordline signal to activate an addressed memory cell in the array. Write driver circuitry is used to perform a write operation to write a data value into the addressed memory cell, and is responsive to assertion of a write assist enable signal during the write operation to implement a write assist mechanism. Further, control circuitry is used to control timing of assertion of the wordline signal in dependence on timing of assertion of the write assist enable signal. By making the timing of assertion of the wordline signal dependent on the timing at which the write assist enable signal is asserted, it has been found that writeability of the memory cells is significantly improved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.