Patent · US Active

Adaptive resistive device and methods thereof

US9324422B2 · kind B2 · utility

0Cited by

6References

24Claims

0Family size

Assignee

The Board of Trustees of the University of Illinois · US

Inventors

Eric Pop · Champaign, US
Feng Xiong · Beijing, CN
Albert Liao · Boise, US

Key dates

Filing date	Apr 18, 2012
Grant date	Apr 26, 2016
Priority date	—
Expiry date	Dec 1, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/53
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.