Field electron emission film, field electron emission device, light emission device, and method for producing them
US9324556B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 12, 2013 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Aug 12, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field electron emission film that is capable of being operated with low electric power and enhancing the uniformity in luminance within the light emission surface contains from 60 to 99.9% by mass of tin-doped indium oxide and from 0.1 to 20% by mass of carbon nanotubes. The film has a structure wherein grooves having a width in a range of from 0.1 to 50 mm are formed in a total extension of 2 mm or more per 1 mm2 on a surface of the film, and carbon nanotubes are exposed on a wall surface of the grooves. After forming an ITO film containing carbon nanotubes on a substrate, grooves are formed on a surface of the ITO film, and the end portions of the carbon nanotubes exposed to the wall surface of the grooves are designated as an emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.