Systems and methods for forming contact definitions
US9324565B1 · kind B1 · utility
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10References
12Claims
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Key dates
| Filing date | Jul 20, 2015 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Jul 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In one embodiment, a method for fabricating thin film tunnel devices includes forming multiple bottom electrodes on a substrate, depositing an insulating layer of material on top of each bottom electrode, and directly depositing a single, continuous top layer of conductive material on the insulating layers that does not contact the bottom electrodes, wherein the bottom electrodes, insulating layers, and continuous top layer together form multiple thin film tunnel devices in which the continuous top layer forms the top electrode for each tunnel device and electrically connects the tunnel devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.