Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials
US9324567B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.