Thin film transistors with metal oxynitride active channels for electronic displays
US9324739B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Nov 3, 2014 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Nov 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit.Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.In yet another embodiment of the invention a high electron mobility thin film transistor structure with a plurality of gate insulating layers and a plurality of metal oxynitride active channel layers for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active chann…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.