Process of forming a semiconductor device
US9324762B1 · kind B1 · utility
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14Claims
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Key dates
| Filing date | Mar 26, 2015 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Mar 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A process of forming a semiconductor device includes second-type blanket implanting a first-type semiconductor substrate to form a second-type implant layer therein; second-type implanting the semiconductor substrate through a first mask to form second-type wells in a second region of the semiconductor substrate; and first-type implanting the semiconductor substrate through a second mask to form isolations in a first region of the semiconductor substrate and to compensate complementary sub-regions of the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.