Metal oxynitride diode devices
US9324884B1 · kind B1 · utility
0Cited by
4References
15Claims
0Family size
Inventors
Key dates
| Filing date | Feb 12, 2015 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Feb 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.