Semiconductor light emitting device
US9324917B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Aug 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/855
Abstract
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.