Thermally assisted MRAM including magnetic tunnel junction and vacuum cavity
US9324937B1 · kind B1 · utility
11Cited by
14References
19Claims
0Family size
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Key dates
| Filing date | Mar 24, 2015 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Mar 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A thermally assisted magnetoresistive random access memory (TAS-MRAM) device includes a magnetic tunnel junction interposed between a first electrical contact and a second electrical contact. The TAS-MRAM device further includes a dielectric layer that is formed on an upper surface of the first electrical contact and that encapsulates the second electrical contact. The dialectic layer has at least one vacuum cavity between an adjacent outer wall of the magnetic tunnel junction and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.